Toshiba FeRAM : Toshiba présente la toute première FeRAM de 128Megabit

FeRAM ou RAM non-volatile est pour beaucoup, le Saint-Graal de l'informatique. 100 000 fois plus rapide qu'une EEPROM, et surtout bien moins gourmande en énergie, la FeRAM va radicalement changer vos habitudes informatiques. Et Aujourd'hui, Toshiba a présenté son module FeRAM de 128 Megabit à 1.6GB/s.

Bref, l'avantage, c'est que la FeRAM garde en mémoire les données même lorsque celle-ci est éteinte. En gros, notre RAM Non-Volatile possède la vitesse d'une RAM, avec les possibilité d'un HDD ou un SSD: ce qui rendrait clairement nos disques durs actuels inutiles...



TOKYO--Toshiba Corporation (TOKYO: 6502) today announced the prototype of a new FeRAM —Ferroelectric Random Access Memory—that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and read and write speeds of 1.6-gigabytes a second, the most advanced combination of performance and density yet achieved. Full details of the new FeRAM will be presented this week at the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, USA.

The new FeRAM modifies Toshiba's original chainFeRAMTM architecture, which significantly contributes to chip scaling, with a new architecture that prevents cell signal degradation, the usual tradeoff from chip scaling. The combination realizes an upscaled FeRAM with a density of 128-megabit. Furthermore, a new circuit that predicts and controls the fluctuations of power supply supports high-speed data transfers. This allowed integration of DDR2 interface to maximize data transfers at a high throughput at low power consumption, realizing read and write speeds of 1.6 gigabytes a second. In developing the new FeRAM, Toshiba broke its own record of 32-megabit density and 200-megabit data transfers, pushing performance to eight times faster than the transfer rate and density of the previous records and the fastest speed of any non-volatile RAM.

FeRAM combines the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off, attributes that continue to attract the attention of the semiconductor industry. Toshiba will continue R&D in FeRAM, aiming for further capacity increases and eventual use in a wide range of applications, including the main memory of mobile phones, mobile consumer products, and cache memory applications in products such as mobile PCs and SSDs.